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STGB35N35LZT4

ST IC芯片 TO-263

STGB35N35LZT4
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STGB35N35LZT4

ST IC芯片 TO-263

  • 製造商：

    ST

  • 規格書：

    STGB35N35LZT4 datasheet

  • 包裝/箱：

    TO-263

  • 產品分類：

    IC芯片

  • RoHS Status： RoHS 狀態 Lead free/RoHS Compliant

現在提交您的報價請求，我們期望在 3月 15, 2026內提供報價。現在就下訂單，我們期望在 3月 18, 2026內完成交易。時間是格林威治標準時間+8:00。

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庫存：3000 PCS

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STGB35N35LZT4 產品詳情

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STGB35N35LZT4

Description

The STGB35N35LZT4 is an IGBT (Insulated Gate Bipolar Transistor) designed by STMicroelectronics. It's a high-voltage, high-frequency device with built-in protection features. Its primary function is to switch electrical currents in power electronics applications, such as motor drives, solar inverters, or industrial control systems. The EAS rating of 350 mJ ensures the device can withstand surge energy during normal operation.

Features

The STGB35N35LZT4 IGBT transistor features a high voltage rating of 350 V, a low-level clamping voltage, and an EAS (Electromagnetic Acceleration) rating of 350 mJ to ensure it withstands harsh environmental conditions. These characteristics make it suitable for applications requiring high power density and reliable operation in demanding environments.

Manufacturer

The STGB35N35LZT4 is manufactured by STMicroelectronics, a leading global semiconductor manufacturer. STMicroelectronics specializes in designing and producing advanced integrated circuits for various applications, including automotive, industrial, and consumer electronics. In summary, STMicroelectronics is a highly specialized technology company in the semiconductor industry.

Applications

The STGB35N35LZT4 IGBT transistor is designed for high-voltage, high-frequency power electronics applications. It finds use in inverters, motor drives, renewable energy systems, and industrial automation equipment.

Equivalent

The equivalent products of STGB35N35LZT4 by STMicroelectronics are likely other IGBT (Insulated Gate Bipolar Transistor) devices with similar voltage rating and current handling capabilities.

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