Regardless of the consistent output of the transistor (Q2) and the forced shutdown, it cannot make the transistor function as a switch. What are the causes and solutions for the leakage power of the transistor in this circuit?
Gerard 發表於 July 7, 2020
Reverse saturation current (diffusion current caused by the difference in minority carrier distribution near the PN junction surface), or caused by the electron-hole pair generated by the strong electric field in the PN junction depletion region when a higher reverse bias is applied Leakage current, and source-drain crosstalk current of short-channel devices. In addition, the heavily doped drain region also generates inter-band tunneling current. For MOS below 5V, due to the high source-drain doping concentration, the inter-band tunneling current even becomes the main source of leakage current.
Karolina 發表於 July 7, 2020
Does your VBS-10 mean -10V? ? ? If it is -10V, then the diode in the NMOS tube directly conducts -10V. . . .
If VBS-10V refers to 10V, replace the above NMOS tube with PMOS tube, and then put the input voltage on the S terminal and the output voltage on the D terminal. . .
Diane 發表於 July 7, 2020
VBS -10V is given to the MOS tube D pole after -10v through the triode.
