I looked at the design and simulation PPT of a MOSFET drive circuit. It said that there is a negative voltage in Vg, which lengthens the drive delay time to a certain extent. It is necessary to eliminate the negative pressure. Then I read a technical manual that specifically introduces a negative pressure drive. Circuit. As shown in the figure below, it can be driven by negative pressure to accelerate the shutdown speed~
Then I was dumbfounded and wanted to ask everyone, when should I use negative pressure to drive? Is there a negative pressure drive that can accelerate the shutdown?
Lotus 發表於 November 30, 2020
Negative pressure can extend the delay drive, which refers to the rise time, because the time from negative to the MOS tube threshold is definitely longer than the time from zero to the threshold.
Crimson 發表於 November 30, 2020
The negative pressure can indeed accelerate the turn-off time.
Ursula 發表於 November 30, 2020
The current MOS basically does not need to be shut off under negative pressure.
IGBT is said to be better with negative pressure.
