SSP45N20B

SSP45N20B/SSS45N20B

General Description

  These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. 

  This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

• 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V 

• Low gate charge ( typical 133 nC) 

• Low Crss ( typical 120 pF) 

• Fast switching 

• 100% avalanche tested 

• Improved dv/dt capability

Absolute Maximum Ratings ( TC = 25°C unless otherwise noted )

Drain current limited by maximum junction temperature.

Thermal Characteristics

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方向：

200V N-Channel MOSFET