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IPD50P04P4L-11

MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2

IPD50P04P4L-11
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IPD50P04P4L-11

MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2

  • 製造商：

    INFINEON

  • 規格書：

    IPD50P04P4L-11 datasheet

  • 包裝/箱：

    TO-252

  • 產品分類：

    IC芯片

  • RoHS Status： RoHS 狀態 Lead free/RoHS Compliant

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IPD50P04P4L-11 產品詳情

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IPD50P04P4L-11

Description

The introduction to IPD50P04P4L-11 revolves around a high-performance P-channel MOSFET designed by Infineon Technologies AG. Key features include low RDS(on), high current capability, and efficient power losses for enhanced thermal performance. This device is suitable for applications requiring robustness, quality, and reliability in the package design.

Features

The IPD50P04P4L-11 is a P-channel power MOSFET with the following key features:
High voltage rating: 40V.
Large current capability: 50A.
Low RDSon (resistance when saturated): Best in class at 40V.
Energy efficiency: Low switching and conduction losses.
Robust package: TO-252-3 DPAK for reliable performance. These features make the IPD50P04P4L-11 suitable for applications requiring high power handling, efficient energy usage, and robust packaging.

Package

The package type of IPD50P04P4L-11 is DPAK-3, which corresponds to a TO-252-3 package.

Manufacturer

The manufacturer of the IPD50P04P4L-11 is Infineon Technologies AG. Infineon is a global semiconductor company known for high-tech solutions in power, automotive, industrial, and communication markets.

Applications

The IPD50P04P4L-11 is a power transistor designed for high-side drive in applications like motor control, solar inverters, or battery management systems. Its low RDSon and high current capability make it suitable for efficient power handling.

Equivalent

The equivalent product of IPD50P04P4L-11 from Infineon Technologies AG is likely another high-side P-channel power transistor with similar voltage and current ratings. To find the exact equivalent, consult a datasheet or contact the manufacturer.

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