FDS86242

Features

Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A

Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A 

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used 

surface mount package

100% UIL Tested

RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild 

Semiconductor‘s advanced Power Trench® process that has 

been optimized for rDS(on), switching performance and 

ruggedness.

Applications

DC/DC converters and Off-Line UPS

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

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