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KSP2907A

PNP Epitaxial Silicon Transistor

KSP2907A
  • KSP2907A
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KSP2907A

PNP Epitaxial Silicon Transistor

  • Manufacturer:

    onsemiconductor

  • Datasheet:

    KSP2907A datasheet

  • Package/Case:

    TO-92-3

  • Product Category:

    Accelerometers

  • RoHS Status: RoHS Status Lead free/RoHS Compliant

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KSP2907A Parts Replacement

Image & Part Number Manufacturer Package/Case Product Category Datasheet Stock Quote
ST TO-92 IC Chips 1779

KSP2907A Product Details

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KSP2907A

Description

The KSP2907A is a bipolar junction transistor (BJT), specifically of PNP type. It is manufactured by Samsung Semiconductor and comes in a TO-92 package. Key features include a collector-emitter voltage of 60V and a maximum collector power dissipation of 625mW. The suffix "-C" indicates either center or side collector configuration, depending on the specific model. In general terms, the KSP2907A is a versatile BJT that can be utilized in various electronic circuits for signal amplification or switching purposes.

Features

The KSP2907A is a bipolar junction transistor (BJT), specifically PNP type, in a TO-92 package. Key features include:
Collector-Emitter Voltage (VCEO): 60V.
Collector Power Dissipation (PC): Max 625mW. The suffix "-C" indicates either a Center Collector (if it's non-suffix) or Side Collector configuration. Overall, the KSP2907A is versatile and suitable for various applications due to its general-purpose nature.

Package

The package type of KSP2907A is TO-92-3, which indicates a three-pin TO-92 case.

Manufacturer

The manufacturer of the KSP2907A is Samsung Semiconductor. It is a multinational technology company known for its consumer electronics, memory chips, and semiconductor solutions.

Applications

KSP2907A, a PNP bipolar junction transistor from Samsung Semiconductor, has versatile applications. It is suitable for general-purpose use in circuits needing amplification or switching control.

Equivalent

The equivalent product of KSP2907A by Samsung Semiconductor is PN2907A.

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