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Description
The STP100N6F7 is a high-performance N-channel power MOSFET designed by STMicroelectronics. It features:
- A voltage rating of 60V, making it suitable for applications requiring robust isolation.
- An impressive typical drain-source resistance (RDS(on)) of 4.7 mOhms, contributing to the device's low on-state power consumption and high efficiency.
- Additional features include a TO-220AB-3 package, excellent figure of merit (FoM), low Crss/Ciss ratio for EMI immunity, and high avalanche ruggedness.
The STP100N6F7 is commonly used in various applications requiring high power handling capabilities and efficient switching. Its advanced features make it a suitable choice for industrial motor control, energy conversion systems, and power supplies.
Features
The STP100N6F7 Power MOSFET features:
Low R_DS(on), offering superior efficiency.
Excellent figure of merit (FoM) for enhanced performance.
Low C_rss/C_iss ratio for EMI immunity and noise reduction.
High avalanche ruggedness, making it suitable for high-voltage applications.
These features collectively make the STP100N6F7 an efficient and reliable power management solution.
Package
The STP100N6F7 power MOSFET is packaged in a TO-220AB-3 package.
Pinout
The STP100N6F7, a power MOSFET, has a pin count of three (3). These pins are typically as follows:
Drain (D): The output terminal where the current flows from the source to the load.
Source (S): The input terminal from which the current flows into the drain when the device is turned on.
Case or Pin 1: A reference point, not connected to any internal node.
Please note that actual pin functions and markings may vary depending on the specific manufacturer's datasheet.
Manufacturer
The manufacturer of the STP100N6F7 is STMicroelectronics, a leading global semiconductor company. Specializing in advanced technologies, STMicroelectronics provides solutions for various industries, including automotive, industrial, and consumer electronics.
Applications
The STP100N6F7 Power MOSFET is widely used in applications requiring high current (up to 100 A), low Rds(on) for efficient power management, and robustness against high voltage spikes. Common domains include motor drives, industrial automation, power supplies, and renewable energy systems.
Equivalent
The equivalent products of STP100N6F7 by STMicroelectronics might include other high-power N-channel MOSFETs with similar voltage ratings, low RDS(on), and TO-220 package. Some examples may be the STP90NF3M or STP150NF3M series.
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